RN2971FE(TE85L,F) Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.1W ES6 Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

Part Nnumber

RN2971FE(TE85L,F)

Description

TRANS 2PNP PREBIAS 0.1W ES6 Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

Producer

Toshiba Semiconductor and Storage

Basic price

The product with part number RN2971FE(TE85L,F) (TRANS 2PNP PREBIAS 0.1W ES6 Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6) is from company Toshiba Semiconductor and Storage. Minimal order quantity is 1 pc.

Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Arrays, Pre-Biased Manufacturer Toshiba Semiconductor and Storage Series - Packaging Digi-Reel® Part Status Obsolete Transistor Type 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) (Ohms) 10k Resistor - Emitter Base (R2) (Ohms) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 100mW Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package ES6

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