RN1301,LF Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM

Part Nnumber
RN1301,LF
Description
TRANS PREBIAS NPN 0.1W USM Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM
Producer
Toshiba Semiconductor and Storage
Basic price
274,89 EUR

The product with part number RN1301,LF (TRANS PREBIAS NPN 0.1W USM Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM) is from company Toshiba Semiconductor and Storage and distributed with basic unit price 274,89 EUR. Minimal order quantity is 3 pc, Approx. production time is 112 weeks.


Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single, Pre-Biased Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tape & Reel (TR) Part Status Active Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) (Ohms) 4.7k Resistor - Emitter Base (R2) (Ohms) 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 100mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package USM


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