RN1102,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS NPN 50V 0.1W SSM Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM

Part Nnumber

RN1102,LF(CT

Description

TRANS PREBIAS NPN 50V 0.1W SSM Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM

Producer

Toshiba Semiconductor and Storage

Basic price

0,39 EUR

The product with part number RN1102,LF(CT (TRANS PREBIAS NPN 50V 0.1W SSM Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM) is from company Toshiba Semiconductor and Storage and distributed with basic unit price 0,39 EUR. Minimal order quantity is 1 pc, Approx. production time is 84 weeks.

Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single, Pre-Biased Manufacturer Toshiba Semiconductor and Storage Series - Packaging Cut Tape (CT) Part Status Active Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) (Ohms) 10k Resistor - Emitter Base (R2) (Ohms) 10k DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 100mW Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package SSM

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