Product Details for Material from Toshiba Semiconductor and Storage - TK8R2A06PL,S4X - X35 PB-F POWER MOSFET TRANSISTOR N-Channel 60V 50A 36W (Tc) Surface Mount TO-220SIS

TK8R2A06PL,S4X Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR N-Channel 60V 50A 36W (Tc) Surface Mount TO-220SIS

Part Nnumber
TK8R2A06PL,S4X
Description
X35 PB-F POWER MOSFET TRANSISTOR N-Channel 60V 50A 36W (Tc) Surface Mount TO-220SIS
Producer
Toshiba Semiconductor and Storage
Basic price
1,39 EUR

The product with part number TK8R2A06PL,S4X (X35 PB-F POWER MOSFET TRANSISTOR N-Channel 60V 50A 36W (Tc) Surface Mount TO-220SIS) is from company Toshiba Semiconductor and Storage and distributed with basic unit price 1,39 EUR. Minimal order quantity is 50 pc, Approx. production time is 84 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 50A Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs 28.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 36W (Tc) Rds On (Max) @ Id, Vgs 11.4 mOhm @ 8A, 4.5V Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack


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